IRG7PH35UDPbF transistor equivalent, insulated gate bipolar transistor.
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* Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON).
* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged trans.
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